Engineering Physics II - Ch. 6.5



Q.9.  Derive an expression for the conductivity of semiconductor containing both free electrons and holes in terms of the concentration n and p and the mobility me and mh.                                                                                            (AKTU. 2014 - 15)       
Ans.        There is a simple relation between mobility and electrical conductivity. Let n be the number density (concentration) of electrons, and let me be their mobility. In the electric field E, each of these electrons will move with the velocity vector -meE, for a total current density of nemeE (where e is the elementary charge). Therefore, the electrical conductivity s satisfies:
            s = neme
This formula is valid when the conductivity is due entirely to electrons. In a p-type semiconductor, the conductivity is due to holes instead, but the formula is essentially the same: If p is the concentration of holes and mh is the hole mobility, the the conductivity is
            s = pemh
If a semiconductor has both electrons and holes, the total conductivity is
            s = e(nme + pmh)

Q.10.  Show that a Fermi level in an intrinsic semiconductor lies half way between the top of valence band and bottom of conduction band.       (2014 - 15)          
Ans.        Fermi level in an intrinsic semiconductor: -
                To classify conductors, semiconductors and insulators we make use of the reference energy level called Fermi level. In case of an intrinsic semiconductor, Fermi level (EF) lies in the middle of energy gap or mid way between the conduction and valance bands.
            Let (at any temperature T0K)
            nv = number of electrons in the valance band
            ne = number of electrons in the conduction band, and
            N = Number of electrons in both bands.
Assumptions: -
(i) In valance band energy of all levels is zero.
(ii) In conduction band, energy of all levels is equal to Eg (energy at gap)
(iii) As compared to forbidden energy gap between two bands, the widths of energy bands are small.
(iv) All levels in a band consist of same energy due to small width of band.
            Let the zero energy reference level is arbitrarily taken at the top of valence band.
\ No. of electrons in the conduction band, ne = N.P (Eg)
Where P (Eg) = probability of an electron having energy Eg

Fermi-Dirac probability distribution function gives its value given below:

Q.11. How the temperature affects the critical field of a superconductor?                                                                                                                       (2015 - 16)

Ans.        Superconductivity is characterized both by perfect conductivity (zero resistance) and by the expulsion of magnetic fields (the Meissner effect). Changes in either temperature or magnetic field can cause the phase transition between normal and superconducting states. For a given temperature, the highest magnetic field under which a material remains superconducting is known as the critical field. The highest temperature under which the superconducting state is seen is known as the critical temperature. At that temperature even the smallest external magnetic field will destroy the superconducting state, so the critical field is zero. As temperature decreases, the critical field increases generally to a maximum at absolute zero.